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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:50Z |
Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using Zr(O-i-Pr)(2)(thd)(2) and O-2
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Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS |
| 國立交通大學 |
2014-12-08T15:43:40Z |
X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxide
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Chen, HW; Landheer, D; Chao, TS; Hulse, JE; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:26Z |
Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)
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Chen, HW; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:21Z |
Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2)
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Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS |
| 國立交通大學 |
2014-12-08T15:41:09Z |
Structure and thermal stability of MOCVD ZrO2 films on Si (100)
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Wu, X; Landheer, D; Graham, MJ; Chen, HW; Huang, TY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:40:41Z |
Ultrathin zirconium silicate films deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2), Si(O(t)-Bu)(2)(thd)(2), and nitric oxide
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Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Kim, JK; Lennard, WN; Chao, TS |
| 國立交通大學 |
2014-12-08T15:39:14Z |
Characterization of interfacial layer of ultrathin Zr silicate on Si(100) using spectroscopic ellipsometry and HRTEM
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Ahn, H; Chen, HW; Landheer, D; Wu, X; Chou, LJ; Chao, TS |
| 國立交通大學 |
2014-12-08T15:37:13Z |
CoTiO3 high-kappa, dielectrics on HSG for DRAM applications
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Chao, TS; Ku, WM; Lin, HC; Landheer, D; Wang, YY; Mori, Y |
Showing items 1-8 of 8 (1 Page(s) Totally)
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